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CMP1617BAX-E
Document Title
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
CMOS LPRAM
Revision History Revision No.
0.0 Initial Draft Add Direct DPD Modify MRS Entry Modify PASR Current Change speed from 60nsec to 55nsec Modify ISB1, PASR Current Modified functional description & MRS update timing Minor Changes Added G(Pb-Free) and H(Pb-Free & Halogen Free) descriptions Add AC Parameter (tCP)
History
Draft date
Dec. 22nd, 2003
Remark
Preliminary
0.1
Mar. 15th, 2004
Preliminary
0.2
Sep. 21th, 2004
Final
0.3 0.4 0.5
Nov. 8th, 2004 Nov. 1st, 2005 Jul. 25 , 2006
th
Final Final Final
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CMP1617BAX-E
FEATURES * Process Technology : Full CMOS
* Organization : 1M x 16 * Power Supply Voltage : 2.7~3.3V * Low Power & Page Modes
CMP1617BX1 : support the PASR/MRS DPD function CMP1617BX2 : support the Direct DPD function CMP1617BX4 : support the PASR/MRS DPD/PAGE function CMP1617BX5 : support the Direct DPD/PAGE function
CMOS LPRAM
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
* Three state output and TTL Compatible * Package Type : 48-FBGA-6.00x8.00 mm2 * Separated I/O power(VCCQ) & Core Power(VCC) * Page read/write operation by 16 words
(CMP1617BA4, CMP1617BA5)
* DPD mode by using MRS only
(CMP1617BA1, CMP1617BA4)
* Direct DPD mode when /ZZ goes low
(CMP1617BA2, CMP1617BA5)
PRODUCT FAMILY
Operating Temperature Operating Voltage (V) Speed Min. Typ. Max. CMP1617BAx-F60E CMP1617BAx-F70E Extended (-25~85'C) 60ns 70ns Typ. 1.5mA Power Dissipation ICC1 f = 1MHz Max. 3mA ICC2 f = fmax Typ. 15mA 12mA Max. 25mA ISB1 (CMOS Standby Current) Typ. 50uA Max. 100uA
Product Family
2.7
3.0
3.3
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and TA = 25C. 2. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER
PIN DESCRIPTION
1 2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
Precharge circuit.
A B C D E F G H
/LB I/O9
/OE /UB
A0 A3
A1 A4
A2 /CS
/ZZ I/O1
Clk gen.
VCC VSS Memory array
I/O10 VSS
I/O11 I/O12
A5 A17
A6 A7 A16
I/O2 I/O4 I/O5
I/O3 VCC VSS
Row Addresses
Row select
VCCQ I/O15 I/O16 A18
I/O13 I/O14 A19 A8
DNU A14 A12 A9
A15 A13 A10
I/O6
I/O7 I/O8
I/O1~I/O8 Data cont I/O Circuit Column select
WE A11
NC
I/O9~I/O16
Data cont
48-FBGA : Top View(Ball Down)
Name /ZZ /CS /OE /WE A0~A19 I/O1~I/O16 NC Function Low Power Modes Chip Select Input Output Enable Input Write Enable Input Address Inputs Data Inputs/Outputs No Connection Name VCC VCCQ VSS /UB /LB DNU Function Core Power I/O Power Ground Upper Byte(I/O9~16) Lower Byte(I/O 1~8) Do Not Use
/CS /OE /WE /UB /LB /ZZ Control Logic
Data cont
Column Addresses
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CMP1617BAX-E
PRODUCT LIST
Extended Temperature Products(-25~85'C) Part Name CMP1617BAx-F60E CMP1617BAx-F70E
1. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER
CMOS LPRAM
Function 48-FBGA, 60ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V) 48-FBGA, 70ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V)
FUNCTIONAL DESCRIPTION
/CS H X1) H X1) L /ZZ H L L H H H /OE X1) X1) X1) X1) H H /WE X1) X1) X1) X1) H H /LB X1) X1) X1) H L X1) L L L H X1) L H H L L H L
1. X means don't care.(Must be low or high state) 2. In case of CMP1617BA2 & CMP1617BA5 product 3. In case of CMP1617BA1 & CMP1617BA4 product
/UB X1) X1) X1) H X1) L H L L H L L
I/O1-8 High-Z High-Z High-Z High-Z High-Z High-Z Dout High-Z Dout Din High-Z Din
I/O9-16 High-Z High-Z High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z Din Din
Mode Deselected Deselected Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write
Power Standby Direct DPD2) Low Power Modes3) Standby Active Active Active Active Active Active Active Active
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Symbol VIN, VOUT Vcc PD TSTG TA Ratings -0.2 to Vcc+0.3V -0.2 to 3.6 1.0 -65 to 150 -25 to 85 Unit V V W 'C 'C
1. Str es s e s g r e ate r tha n th o s e l i st e d u n d er " A bsolute Maxim um Ratings" may cause permanent dam age to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS1)
Item Supply voltage I/O operating voltage (VCCQ VCC) Ground Input high voltage Input low voltage Symbol VCC VCCQ VSS VIH VIL CMP1617BA Min 2.7 2.7 0 0.8VCCQ -0.23) Max 3.3 3.3 0 VCC+0.22) 0.2VCCQ Min 2.7 2.25 0 0.8VCCQ -0.23) Max 3.3 2.75 0 VCC+0.22) 0.2VCCQ Min 2.7 1.65 0 0.8VCCQ -0.23) Max 3.3 1.95 0 VCC+0.22) 0.2VCCQ Unit V V V V V
Note : 1.TA=-25 to 85'C, otherwise specified. 2. Overshoot : Vcc+1.0V in case of pulse width20ns. 3. Undershoot : -1.0V in case of pulse width20ns. 4. Overshoot and undershoot are sampled, not 100% tested.
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CMP1617BAX-E
CAPACITANCE1) (f=1MHz , TA=25'C)
Item Input capacitance Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
CMOS LPRAM
Symbol CIN CIO Test Condition VIN=0V VIO=0V Min Max 8 8 Unit pF pF
DC AND OPERATING CHARACTERISTICS
Item Input leakage current Output leakage current Symbol ILI ILO ICC1 Average operating current ICC2 Output low voltage Output high voltage Standby Current(TTL) Standby Current(CMOS) VOL VOH ISB ISB1 ISB0 Low Power Modes ISB0a ISB0b ISB0c VIN=VSS to VCC /CS=VIH, /ZZ=VIH, /OE=VIH or /WE=VIL, VIO=VSS to VCC Cycle time=1us, 100%duty, IIO=0mA, /CS0.2V, /ZZ=VIH, VIN0.2V or VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, /CS=VIL, /ZZ=VIH, VIN=VIL or VIH IOL=0.5mA IOH=-0.5mA /CS=VIH, /ZZ=VIH, Other inputs=VIH or VIL /CSVCC-0.2V, /ZZVCC-0.2V, Other inputs=0~VCC /ZZ0.2V, Other inputs=0~VCC, No refresh(DPD) /ZZ0.2V, Other inputs=0~VCC, 1/4 refresh area selection /ZZ0.2V, Other inputs=0~VCC, 1/2 refresh area selection /ZZ0.2V, Other inputs=0~VCC, All refresh area selection 0.8VCCQ 0.3 100 10 55 70 100 Test Conditions Min -1 -1 Typ Max 1 1 3 25 0.2VCCQ Unit uA uA mA mA V V mA uA uA uA uA uA
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CMP1617BAX-E
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Input/Output Reference)
Input pulse level : 0.2 to VCC-0.2V Input rising and falling time : 5ns Input and output reference voltage : 0.5*VCCQ Output load(see right) : CL=30pF+1TTL 30pf
CMOS LPRAM
1TTL
AC CHARACTERISTICS(VCC=2.7V~3.3V, Extended product : TA=-25 to 85'C)
Speed Bins Parameter List Symbol Min Read Cycle Time Address Access Time Chip Select to Output Output Enable to Valid Output /UB, /LB Access Time Read Chip Select to Low-Z Output /UB, /LB Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High- Z Output /UB, /LB Disable to High- Z Output Output Disable to High- Z Output Output Hold from Address Change Write Cycle Time Chip Select to End of Write Address Set-up Time Address Valid to End of Write /UB, /LB Valid to End of Write Write Write Pulse Width Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End Write to Output Low-Z Page Mode Cycle Time Page Page Mode Address Access Time Maximum Cycle Time /CS High Pulse Width tRC tAA tCO tOE tBA tLZ tBLZ tOLZ tHZ tBHZ tOHZ tOH tWC tCW tAS tAW tBW tWP tWR tWHZ tDW tDH tOW tPC tPAA tMRC tCP 60 10 10 5 0 0 0 5 60 50 0 50 50 50 0 0 20 0 5 25 10 60ns Max 40k 60 60 25 60 5 5 5 40k 5 25 40k Min 70 10 10 5 0 0 0 5 70 60 0 60 60 50 0 0 20 0 5 25 10 70ns Max 40k 70 70 25 70 5 5 5 40k 5 25 40k ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Units
1. /CS High Pulse Width is defined by /CS or (/UB and /LB) because /UB & /LB can make standby mode when /UB=High and /LB=High.
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CMP1617BAX-E
Power Up Sequence
1. Apply Power 2. Maintain stable power for a minimum of 200us with /CS=VIH
CMOS LPRAM
Standby Mode State machines
Power On
/CS=VIH
Wait 200us
Initial State
/CS=VIH, /ZZ=VIH
/CS=VIL, /ZZ=VIH /UB or/and /LB=VIL /CS=VIH, /ZZ=VIL
Active Mode
/CS=VIL /ZZ=VIH /CS=VIH (or/and /UB=/LB=VIH) /ZZ=VIH /CS=VIH, /ZZ=VIL
/CS=VIH /ZZ=VIL
/CS=VIlL /ZZ=VIH
Standby Mode
Low Power Modes 1 (16M/8M/4M bits)
Low Power Modes 2 (Data Invalid)
/CS=VIH, /ZZ=VIL
Standby Mode Characteristics
Mode Standby Memory Cell Data Valid Invalid 1/4 valid Low Power Modes 1/2 valid valid 70 (ISB0b) 100 (ISB0c) 0 0 Standby Current(uA) 100 (ISB1) 10 (ISB0) 55 (ISB0a) Wait Time(us) 0 200 0
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CMP1617BAX-E
READ CYCLE (1)
Address
tOH tAA
CMOS LPRAM
tRC
(Address controlled,/CS=/OE=VIL, /ZZ=/WE=VIH, /UB or/and /LB=VIL)
Data Out
Previous Data Valid
Data Valid
READ CYCLE (2)
Address
(/ZZ=/WE=VIH)
tRC
tAA tCO
tOH
/CS
tHZ
/UB, /LB /OE
tOLZ tBLZ tLZ
tBA tBHZ
tOE
tOHZ
Data Out
High-Z
Data Valid
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. 3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us.
PAGE READ CYCLE
(/ZZ=/WE=VIH, 16 words access)
tMRC tRC tPC tPC tPC tPC tPC tPC tPC
A0~A3
tAA
A4~A20
tOH
/CS /UB, /LB /OE
tCO
tHZ
tBA
tBHZ
tOE
tOLZ tBLZ tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid Data Valid tOHZ
Data Out
High-Z
tLZ
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. 3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us.
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CMP1617BAX-E
WRITE CYCLE (1)
Address
tCW(2)
CMOS LPRAM
tWC
(/WE controlled, /ZZ=VIH)
/CS
tAW
tWR(4)
/UB, /LB /WE
tAS(3)
tBW tWP(1)
tDW
tDH High-Z tOW
Data in Data Out
High-Z tWHZ
Data Valid
Data Undefined
WRITE CYCLE (2)
Address
(/CS controlled, /ZZ=/WE=VIH)
tWC
tAS(3)
tCW(2) tAW
tWR(4)
/CS /UB, /LB /WE Data in Data Out
High-Z tBW tWP(1) tDW tDH
Data Valid
High-Z
WRITE CYCLE (3)
Address
(/UB, /LB controlled, /ZZ=VIH)
tWC
tCW(2)
tWR(4)
/CS
tAW
/UB, /LB
tAS(3)
tBW tWP(1)
/WE Data in Data Out
tDW
tDH
Data Valid
High-Z
High-Z
1. A write occurs during the overlap (tWP) of low /CS and /WE. A write begins when /CS goes low and /WE goes low with asserting /UB or /LB for single byte operation or simultaneously asserting /UB and /LB for double byte operation. A write ends at the earliest transition when /CS goes high and WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the /CS going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high. 5. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us.
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CMP1617BAX-E
PAGE WRITE CYCLE
(Address controlled, /ZZ=VIH)
tMRC tWC tPC tPC tPC tPC tPC tPC
CMOS LPRAM
tPC
A0~A3
A4~A20
/CS
/UB, /LB
tAS(3)
/WE
tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH
Data in
High-Z tWHZ
Data Valid
Data Valid
Data Valid
Data Valid
Data Valid
Data Valid
Data Valid
Data Valid
High-Z
tOW
Data Out
Data Undefined
1. A write occurs during the overlap (tWP) of low /CS and /WE. A write begins when /CS goes low and /WE goes low with asserting /UB or /LB for single byte operation or simultaneously asserting /UB and /LB for double byte operation. A write ends at the earliest transition when /CS goes high and /WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the /CS going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high. 5. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us.
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CMP1617BAX-E
LOW POWER MODES 1. Mode Register Set
A19 ~ A5 A4 A3 A2 A1
CMOS LPRAM
A0
0
ZZ
Enable/Disable
Array On/Off on /ZZ
Half Selection
Array Refresh Area
/ZZ Enable/Disable A4 0 1 Type Deep Power Down Enable DPD Disable (Default)
Array On/Off on /ZZ A3 0 1 Type Partial Array Refresh Mode (Default) Reduced Memory Size Mode
Note: If the register is written to enable the Deep Power Down, the part will go into Deep Power Down during the following time that /ZZ is driven low and there is no MRS update. When /ZZ is driven high, all of the register settings will return to default state for the part (i.e. full array refresh, Deep Power Down Disabled).
Note: The RMS(Reduced Memory Size) mode is enabled after /ZZ goes high and remains enabled after /ZZ goes high. To change to a different mode, the mode register will have to be rewritten.
Half Selection (Top / Bottom) A2 0 1 Type Bottom (Default) Top
Array Refresh Area A1 0 0 1 1 A0 0 1 0 1 Type Full Array (Default) RFU 1/2 Array 1/4 Array
2. MRS Update
tWC
Address
tAS(3) tCW(2)
tWR(4)
/CS
tAW
/UB, /LB /WE
tZZWE
tBW
tWP(1)
/ZZ
Register Write Start
Register Write Complete
Register Update Complete
The register update take place on the rising edge of /ZZ. Once the register is updated, the next time /ZZ goes low, without any updates to the register starting within the tZZWE max time of 1us, the part will refresh the array selected. The data bus is a don't care When /ZZ is low during the register updates.
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CMP1617BAX-E
3. Deep Power Down Mode Entry/Exit
tWC
CMOS LPRAM
A4
tAS(3) tCW(2 ) tAW tWR(4 )
/CS /UB, /LB /WE
tZZWE
tBW tWP(1) tR tZZmin
Next Cycle
/ZZ
Register Write(DPD)
Deep Power down start
Deep Power down exit
Parameter tZZWE tR(Deep Power Down Mode only) tZZmin
Description ZZ low to Write Enable Low Operation Recovery Time Low Power Mode Time
Min 0 200 10
Max 1 -
Units us us us
4. Address Information
Partial Array Refresh Mode (A3=0, A4=1) A2 0 0 X 1 1 A1,A0 11 10 00 11 10 Refresh Section 1/4 1/2 Full 1/4 1/2 Address 00000h-3FFFFh 00000h-7FFFFh 00000h-FFFFFh C0000h-FFFFFh 80000h-FFFFFh Size 256Kbx16 512Kbx16 1Mbx16 256Kbx16 512Kbx16 Density 4Mb 8Mb 16Mb 4Mb 8Mb
Reduced Memory Size Mode (A3=1, A4=1) A2 0 0 1 1 A1,A0 11 10 11 10 Refresh Section 1/4 1/2 1/4 1/2 Address 00000h-3FFFFh 00000h-7FFFFh C0000h-FFFFFh 80000h-FFFFFh Size 256Kbx16 512Kbx16 256Kbx16 512bx16 Density 4Mb 8Mb 4Mb 8Mb
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CMP1617BAX-E
PACKAGE DIMENSION
48 BALL FINE PITCH BGA(0.75mm ball pitch)
Top View Bottom View B B B1
CMOS LPRAM
Unit : millimeters
A1 INDEX MARK
0.05 0.05
6 A B
5
4
3
2
1
#A1
C D C1 E C1/2 F G H B/2 Detail A 0.25/Typ. A Y Max 6.10 8.10 0.40 1.20 0.30 0.08 NOTES.
1. Bump counts : 48(8row x 6column) 2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.) 3. All tolerance are +/-0.050 unless otherwise specified. 4. Typ : Typical 5. Y is coplanarity : 0.08(Max)
Side View E2 D
E1
E
0.30
C
C
A B B1 C C1 D E E1 E2 Y
Min 5.90 7.90 0.30 0.20 -
Typ 0.75 6.00 3.75 8.00 5.25 0.35 1.10 0.85 0.25 -
0.85/Typ.
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C

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